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| Datasheet File OCR Text: |
| NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Symbol ICBO ICEO IEBO hFE VCE(sat) VBE Test Conditions VCB = 200V, IE = 0 VCE = 180V, IB = 0 VEB = 5V, IC = 0 VCB = 5V, IC = 1A IC = 1A, IB = 20mA VCE = 5V, IC = 1A Min - - - 180 500 - 0.6 Typ - - - - - - 0.7 Max 100 10 100 - 2000 1.0 0.8 V V Unit A mA A V V(BR)CEO IC = 50mA, IB = 0 .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47) |
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